HXY150N03NF N-Channel Enhancement Mode MOSFET
■The HXY150N03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 30V ID =150A
■RDS(ON) < 2.4mΩ VGS=10V
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[ Battery protection ][ Load switch ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2021/11/5 |
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2.5 MB |
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