IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET
●DESCRIPTION
■Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
■The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
●FEATURES
■Isolated Package
■High Voltage Isolation = 2.5 kV-RMS (t = 60 s; f = 60 Hz)
■Sink to Lead Creepage Distance = 4.8 mm
■Dynamic dV/dt Rating
■Low Thermal Resistance
■Lead (Pb)-free Available
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Datasheet |
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Please see the document for details |
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TO-220 FULLPAK |
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English Chinese Chinese and English Japanese |
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19-Jan-09 |
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S09-0013-Rev. A |
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91145 |
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1 MB |
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