IRFI614G Vishay Siliconix Power MOSFET
■Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
●FEATURES
■Isolated package
■High voltage isolation = 2.5 kV-RMS (t = 60 s;f = 60 Hz)
■Sink to lead creepage distance = 4.8 mm
■ Dynamic dV/dt rating
■Low thermal resistance
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Datasheet |
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Please see the document for details |
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TO-220 FULLPAK |
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English Chinese Chinese and English Japanese |
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10-May-2021 |
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Rev.B |
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91145;91359 |
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277 KB |
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