NP100N055MUH, NP100N055NUH, NP100N055PUH MOS FIELD EFFECT TRANSISTOR
●The NP100N055MUH, NP100N055NUH, NP100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
■FEATURES
●Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
●Super low on-state resistance
▲NP100N055MUH, NP100N055NUH
◆RDS(on) = 4.9 mΩ MAX. (VGS = 10 V, ID = 50 A)
▲NP100N055PUH
◆RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 50 A)
●High avalanche energy, High avalanche current
●Low input capacitance
▲Ciss = 7000 pF TYP. (VDS = 25 V)
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NP100N055MUH 、 NP100N055NUH 、 NP100N055PUH 、 NP100N055MUH-S18-AY 、 NP100N055NUH-S18-AY 、 NP100N055PUH-E1-AY 、 NP100N055PUH-E2-AY |
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MOS FIELD EFFECT TRANSISTOR 、 SWITCHING N-CHANNEL POWER MOS FET 、 N-channel MOS Field Effect Transistors |
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Datasheet |
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Please see the document for details |
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TO-220;TO-262;TO-263 |
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English Chinese Chinese and English Japanese |
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December 2007 |
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D18808EJ3V0DS00 |
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730 KB |
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