FIR10N60FG Advanced N-Ch Power MOSFET-H
■FIR10N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
■These devices are widely used in AC-DC power suppliers, DC- DC converters and H-bridge PWM motor drivers.
●Features
■10A,600V,RDS(on)(typ.) =0.68Ω@VGS=10V
■Low gate charge
■Low Crss
■Fast switching
■Improved dv/dt capability
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Advanced N-Ch Power MOSFET 、 N-channel enhancement mode power MOS field effect transistor |
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[ AC-DC power suppliers ][ DC- DC converters ][ H-bridge PWM motor drivers ] |
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2018.01.01 |
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REV:1.0 |
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3.1 MB |
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