FIR11N40FG 400V N-Channel MOSFET-G

2023-04-14
●Features:
■Low Intrinsic Capacitances.
■Excellent Switching Characteristics.
■Extended Safe Operating Area.
■Unrivalled Gate Charge :Qg=27nC (Typ.).
■BVDSS=400V,ID=11A
■RDS(on) : 0.4Ω (Max) @V G=10V
■100% Avalanche Tested

First Semiconductor

FIR11N40FG

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Part#

N-Channel MOSFET

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Datasheet

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Please see the document for details

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TO-220F

English Chinese Chinese and English Japanese

2018.01.01

REV 1.0

2.3 MB

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