HMS150N04D N-Channel Super Trench Power MOSFET
■The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
●General Features
■VDS =40V, ID =150A
▲RDS(ON)=1.6mΩ (typical) @ VGS=10V
▲RDS(ON)=1.9mΩ (typical) @ VGS=4.5V
■Excellent gate charge x RDS(on) product(FOM)
■Very low on-resistance RDS(on)
■150 °C operating temperature
■Pb-free lead plating
■100% UIS tested
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Datasheet |
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2022/11/7 |
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528 KB |
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