HM2800D N-Channel Enhancement Mode Power MOSFET
■The HM2800D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
●General Features
■VDS = 20V, ID = 5.0A
▲RDS(ON) < 40mΩ @ VGS=2.5V
▲RDS(ON) < 33mΩ @ VGS=4.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package
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[ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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DFN2X2-6L |
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English Chinese Chinese and English Japanese |
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2022/11/6 |
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v1.0 |
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872 KB |
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