HM2800D N-Channel Enhancement Mode Power MOSFET

PublishTime：2021-07-05

■Description
●The HM2800D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
■General Features
● VDS=20V，I-D =5.0A
◆RDS(ON)<40mΩ @ VGS=2.5V
◆RDS(ON)<33mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package

Brand of Product：	H&M SEMI
Part#：	HM2800D More Part#
Product Category：	N-Channel MOSFET More
Application：	[ Battery protection ][ Load switch ][ Power management ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN2X2-6L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/01
Version Number：
Data Encoding：
Data Size：	1.1 MB

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