HMS10N50/HMS10N50F 500V N-Channel MOSFET
■This Power MOSFET is produced using H&M Semi’s Advanced Super-Junction technology.
■This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
■These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
●Features
■10A, 500V, RDS(on) typ. = 0.4Ω@VGS = 10 V
■Low gate charge ( typical 25nC)
■High ruggedness
■Fast switching
■100% avalanche tested
■Improved dv/dt capability
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2022/11/6 |
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1.2 MB |
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