RAJ2930004AGM Gate Driver IC for IGBTs and SiC MOSFETs Preliminary Short Datasheet
●The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance over 150 V/ns, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems.
●This device contains Gate drive circuit, Miller clamp circuit, and Soft turn-off circuit as well as several types of protection circuits such as Overcurrent detection.
■Features
●On-chip Micro Isolator (isolated circuit)
▲High voltage isolation: 3750VRMS, 1min
▲High CMTI (Common Mode Transient Immunity): over 150V/ns
●High output gate drive circuit
▲Gate drive output peak current (Source / Sink): 10A typ. / 10A typ.
▲On-chip active miller clamp
▲Soft turn-off function
●Various on-chip protection circuits
▲Over current detection by DESAT (Desaturation Protection): 8.9V +/- 6.7% (Threshold voltage)
▲On-chip under voltage lockout circuit (UVLO)
◆VCC1 (5 V system): 4.1V typ.
◆VCC2 (15 V system): 10V typ.
▲Fault Alarm outputs on FOB pin and the latched fault status can be reset by RSTB pin
●Operating temperature: - 40 to 125 °C (Junction temperature: 150 °C max)
●AEC-Q100 Qualified (Grade 1)
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[ IGBTs ][ SiC MOSFETs ][ high voltage inverter applications ][ Traction inverters ][ EV ][ HEV ][ DC-DC converters ][ On-board charger ][ Inverters ][ converters ][ industrial instruments ][ automotive ] |
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Datasheet |
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Please see the document for details |
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SOP;P-SOP16-7.5×10.3-1.27 |
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English Chinese Chinese and English Japanese |
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Jan. 2023 |
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Rev0.1 |
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AAMKD-AB-23-0007 |
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952 KB |
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