HKTD4N65 N-CHANNEL Power MOSFET
■VDS: 650V Max., ID: 4A Max.
■RDS(ON): 2.6Ω(max.) @VGS=10V, ID=1A
■High density cell design for ultra low on-resistance
■Fully characterized avalanche voltage and current
●MECHANICAL DATA
■Case: TO-252
■Case material: Molded Plastic. UL flammability 94V-0
■Weight: 0.33grams (approximate)
■Marking: D4N65
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2022/6/20 |
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2.9 MB |
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