4N65/F4N65/I4N65/E4N65/B4N65/D4N65 4A 650V N-channel Enhancement Mode Power MOSFET
●These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
■Features
●Fast switching
●ESD improved capability
●Low on resistance(Rdson≤2.8Ω)
●Low gate charge(Typ: 14.5nC)
●Low reverse transfer capacitances(Typ: 3.5pF)
●100% single pulse avalanche energy test
●100% ΔVDS test
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N-channel Enhancement Mode Power MOSFET 、 N-channel enhanced vdmosfets |
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[ power switching circuit ][ electron ballast ][ adaptor ] |
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Datasheet |
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Please see the document for details |
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TO-220C;TO-220F;TO-262;TO-263;TO-252B;TO-251B |
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English Chinese Chinese and English Japanese |
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2017.03.14 |
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Rev. 1.0 |
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1.7 MB |
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