SFS4616T N AND P-CHANNEL MOSFET
■ The SFS4616T uses advanced trench technology and design to provide excellent RDS(ON) with low gate chargeI.t can be used in a wide variety of applications.
●FEATURES
■N-CHANNEL
◆VDS=30V,ID=6.5A
◆RDS(ON)<24mΩ@VGS=10V
◆RDS(ON)<37mΩ@VGS=4.5V
■P-CHANNEL
◆VDS=-30V,ID=-7A
◆RDS(ON)<30mΩ@VGS=10V
◆RDS(ON)<50mΩ@VGS=4.5V
■High density cell design for ultra low Rdson
■Special process technology for high ESD capability
■Exceptional on-resistance and maximum DC currentcapability
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2019/9/18 |
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3.1 MB |
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