SFS4606T N AND P-CHANNEL MOSFET
■ Complementary Enhancement MOSFET in a SOP-8 Package. The SFS4606T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge can be used in a wide variety of applications.
●FEATURES
■N-CHANNEL
◆VDS(V)=30V,ID=6.9A
◆RDS(ON)<28mΩ(VGS=10V)
◆RDS(ON)<42mΩ(VGS=4.5V)
■P-CHANNEL
◆VDS(V)=-30V,ID=-6.0A
◆RDS(ON)<35mΩ(VGS=10V)
◆RDS(ON)<58mΩ(VGS=4.5V)
■High density cell design for ultra low Rdson
■Secial process technology for high ESD capability
■Exceptional on-resistance and maximum DC cueeentcapability
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2020/9/21 |
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1.8 MB |
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