12N65H 12A,650V N-CHANNEL MOSFET
●Features
■R-DS(on)= 0.63Ω @V-GS= 10 V
■Low gate charge (typical 52nC)
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability
[ high efficiency switched mode power supplies ][ electronic lamp ballasts ] |
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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JAN 2014 |
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Rev 1.1 |
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310 KB |
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