2N65H 2.0A 650V N-CHANNEL MOSFET

2022-10-29
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
●Features
■R-DS(on)= 4.1Ω @V-GS= 10 V
■Low gate charge (typical 96.5nC)
■High ruggedness
■Fast switching
■100% avalanche tested
■Improved dv/dt capability

KIA

2N65H

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Part#

N-CHANNEL MOSFET

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high efficiency switched mode power supplies ]

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Datasheet

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Please see the document for details

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TO-251;TO-252

English Chinese Chinese and English Japanese

JAN 2014

Rev1.1

333 KB

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