High Aspect Ratio Through-hole Interconnections in Silicon Substrates

PublishTime：2022-10-29

● We have developed key technologies to form conductive interconnections through a thick silicon substrate, which are potentially applied for 3D stacking of semiconductor devices or pack- aging of Micro Optical Electro-Mechanical System devices. In this paper, we demonstrate to form metal filled through-holes in thick Silicon substrates (t = ~500μm) mainly using Photo Assisted Electro-Chemical Etching and Molten Metal Suctioned Method. The through-holes had 15 μm in the diameter and the aspect ratio of 35. And the maximum density was 500 THs/cm 2 . The dielectric breakdown voltage of the through-holes was more than 500V. In result of a radioisotope leak test using Kr-85, the leakage rate of through-holes between the front and the back of the substrate was lower than the limit of detection (1 × 10 −15 Pa · m³ /sec.).

Brand of Product：	Fujikura
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Language：	English Chinese Chinese and English Japanese
Date of Creation：	2003/2/28
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