CHKA012bSYA 130W Packaged Power Transistor GaN HEMT on SiC in ceramic-metal flange package
■The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
■The CHKA012bSYA is developed on a 0.5μm gate length GaN HEMT process. It requires an external matching circuitry.
■The CHKA012bSYA is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
●Main Features
■Wide band capability: up to 6GHz
■Pulsed and CW operating modes
■High Output power > 90W
■High Power Added Efficiency: up to 58%
■DC bias: VDS = 50V @ ID_Q = 640 mA
■MTTF > 10⁶ hours @ Tj = 200°C
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Packaged Power Transistor 、 GaN HEMT 、 unmatched packaged Gallium Nitride High Electron Mobility Transistor |
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[ radar ][ telecommunication ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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11 Oct 22 |
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912 KB |
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