STN4110 N Channel Enhancement Mode MOSFET

2022-10-14
●STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
●Features:
■60V/20.0A, RDS(ON) = 10mΩ(Typ.)@VGS= 10V
■60V/20.0A, RDS(ON) = 12mΩ@VGS= 4.5V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■TO-252 package design

Stanson

STN4110

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Part#

N Channel Enhancement Mode MOSFET

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Datasheet

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Please see the document for details

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TO-252;TO-252-2L;D-PAK

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2015/9/10

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