EPC Thermal Modeling Calculator Quick Start Guide
■Thermal management strategies are essential for high-power devices, and with chip-scale packaging (CSP) of eGaN® FETs, many design advantages can be leveraged at the board-side and the backside (i.e., case) for improved heat dissipation. The PCB offers a first heat dissipation path from the GaN devices, which offers high conductance for CSP parts. The strategic placement of vias improve heat conduction into the inner layers of the PCB. Heat spreading in the board is dependent on the PCB thermal properties which are determined by the conductor layer count and copper thickness.The heat then dissipated from the PCB to ambient through forced air cooling.
■Additional heat dissipation can be achieved by benefiting from the low thermal resistance to case side for CSP GaN. Adding a heatsink to the exposed die at the case side increases surface area for heat exchange with the ambient. Thermal interface material (TIM) is required to enhance the thermal contact at the interface between the device and the heatsink. For smaller size dies, gap fill material can also provide a heat conductance path from the die sides, further reducing thermal resistance to the sink surface.
●DESCRIPTION
■The presented Thermal Calculator, a GaN Power Bench tool, provides quick estimates for the thermal performance parameters of PCB-mounted GaN devices subject to both board-side cooling through forced convection, and backside cooling through a thermal solution consisting of a heat spreader and heatsink. The model accounts for the PCB construction (size, stack-up and via density), die sizes, power losses, TIM materials and heat sink solution. We present in this text the basic layout of the Thermal Calculator user interface and simple instructions on how to define the input parameters and run the thermal model.
■The model allows to compare the thermal performance of the GaN FETs with and without backside cooling and can be used to quickly estimate the effect of using different TIM pads and TIM gap fillers. In addition, the cooling effect of the heat spreader and heatsink can be quickly assessed. Two configurations are considered: one for a single FET and another for two FETs in a half-bridge circuit. The different input parameters required for the model can be inputted using a simple and intuitive graphical user interface (GUI) after which the model calculates individual thermal resistances values (Rth) and the operating junction temperatures (TJ) for a defined power loss.
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Thermal Modeling Calculator 、 Thermal Calculator 、 GaN Power Bench tool |
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User's Guide |
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Please see the document for details |
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CSP |
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English Chinese Chinese and English Japanese |
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2022/8/29 |
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Revision 3.0 |
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2.1 MB |
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