CPC5603 N-Channel Depletion Mode FET
■The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division's proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies.
■One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A.
■The CPC5603 has a typical on-resistance of 8, a drain-to-source voltage of 415V and is available in the SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
●Features
■415V Drain-to-Source Voltage
■Depletion Mode Device Offers Low RDS (on) at Cold Temperatures
■Low On-Resistance: 8Ω (Typical) @ 25°C
■Low VGS(off) Voltage: -2.0V to -3.6V
■High Input Impedance
■Low Input and Output Leakage
■Small Package Size SOT-223
■PC Card (PCMCIA) Compatible
■PCB Space and Cost Savings
[ Support Component for LITELINK™Data Access Arrangement (DAA) ][ Telecom ][ Normally-On Switches ][ Ignition Modules ][ Converters ][ Power Supplies ] |
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Datasheet |
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Please see the document for details |
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SOT-223 |
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English Chinese Chinese and English Japanese |
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7/20/2015 |
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R08 |
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DS-CPC5603-R08 |
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282 KB |
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