CPC5603 N-Channel Depletion Mode FET
■Description：
●The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies.
●One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A.
●The CPC5603 has a typical on-resistance of 8Ω, a drain-to-source voltage of 415V and is available in the SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
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N-Channel Depletion Mode FET 、 N-channel depletion mode Field Effect Transistor 、 FET |
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[ Support Component ][ LITELINK™ Data Access Arrangement ][ DAA ][ Telecom ][ Normally-On Switches ][ Ignition Modules ][ Converters ][ Security ][ Power Supplies ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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7/20/2015 |
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R08 |
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DS-CPC5603-R08 |
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212 KB |
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