AO2310 N-Channel MOSFET

2022-08-26
●Description:
■This N-Channel MOSFET uses advanced trench technology and design to provide excellent Rps(on) with low gate charge. lt can be used in a wide variety of applications.
●FEATURES:
■VDS=60V,ID=3A,RDS(ON)<100mΩ@VGS=10V
■Low gate charge.
■Green device available.
■Advanced high cell denity trench technology for ultra RDS(ON).
■Excellent package for good heat dissipation.

Changfu Semiconductor

AO2310

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Part#

N-Channel MOSFET

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Datasheet

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Please see the document for details

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SOT-23

English Chinese Chinese and English Japanese

2022/7/15

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