AOD442 N-Channel MOSFET
■This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on)with low gate charge.It can be used in a wide variety of applications.
●FEATURES:
■VDS=60V,ID=50A,RDS(ON)<17mΩ@VGS=10V
■Low gate charge.
■Green device available.
■Advanced high cell denity trench technology for ultra RDS(ON)
■Excellent package for good heat dissipation.
|
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
2019/12/10 |
|
|
|
|
|
1.4 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.