JXP3N10MRG 100V N-Channel Enhancement Mode MOSFET
●The JXP3N10MRG uses Shield Gate Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
■GENERAL FEATURES
●ID=3.2A, VDS=100V
◆RDS(ON)(Typ.)=100mΩ@VGS=10V
◆RDS(ON)(Typ.)=130mΩ@VGS=4.5V
●High density cell design for ultra low RDS(ON)
●Fully characterized avalanche voltage and current
●Good stability and uniformity with high EAS
●Excellent package for good heat dissipation
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[ PWM applications ][ Load switch ] |
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Datasheet |
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Please see the document for details |
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SOT23-3L |
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English Chinese Chinese and English Japanese |
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2022/1/9 |
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REV.1.0 |
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1.1 MB |
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