Reliability Qualification Report for DDRIIIL SDRAM with Pb/Halogen Free (64M×16, 25nm SDRAM AS4C64M16D3LC-12BCN)
●In order to meet the most stringent market demands for high quality and reliability semiconductor components, Alliance maintains a strict reliability program in all products. The purpose of this report is to give an overview of the reliability status of AS4C64M16D3LC-12BCN. Accelerated tests are performed on product, and then the results are extrapolated to standard operating conditions in order to calculate and estimate the component’s failure rate.
■CONCLUSION:
●Reliability test is to ensure the ability of a product in order to perform a required function under specific conditions for a certain period of time. Through those tests, the devices of potential failure can be screened out before shipping to the customer. At the same time, the test results are fed back to process, design and other related departments for improving product quality and reliability.
●According to the life time test data, the short-term 18Hrs failure rate (= the normal operation 0-1 year) of AS4C64M16D3LC-12BCN is equal to 0 DPM at Ta=55°C and Vcc=1.35V with 60% confidence level AND the long-term 1000Hrs failure rate (= the normal operation 1-10 year) of AS4C64M16D3LC-12BCN is equal to 15 FIT at Ta=55°C and Vcc=1.35V with 60% confidence level. The results of environmental test, ESD test and latch-up test also ensure that AS4C64M16D3LC-12BCN is manufactured under a precise control of quality work by Alliance and its subcontractors. Thus, this experiment based on the Alliance reliability test standard for above test items can all pass.
●With the extensive research and development activities and the cooperation of all departments, Alliance continuously sets and maintains higher standard of quality and reliability to satisfy the future demand of its customers.
|
high-speed CMOS Double Data Rate Three Synchronous Dynamic Random Access Memory (DDRIIIL SDRAM) |
|
|
|
|
|
Test Report |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
June 27, 2022 |
|
|
|
|
|
|
|
|
839 KB |
- +1 Like
- Add to Favorites
Recommend
- Alliance Memory Announces ISO 9001:2015 Recertification
- Alliance Memory Launched High-Speed CMOS DDR3 SDRAMs With 1Gb, 2Gb, and 4Gb Densities in 78-Ball and 96-Ball FBGA Packages
- Alliance Memory Expanded Lineup of High-Speed CMOS DDR4 SDRAMs AS4C1G8D4 and AS4C512M16D4 With 8Gb Devices
- Alliance Memory Bolsters Product Lineup With 4Gb High-Speed CMOS DDR4 SDRAMs AS4C256M16D4 and AS4C512M8D4
- Alliance Memory Introduced AEC-Q100-Compliant 2Gb DDR3L SDRAMs AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR
- Alliance Memory AS4C256M16D4 and AS4C512M8D4 4Gb High-Speed CMOS DDR4 SDRAMs offer Low Power Consumption of +1.2V
- Alliance Memory AS4C1G8D4 and AS4C512M16D4: the 8Gb High-Speed CMOS DDR4 SDRAMs with Low Power Consumption of +1.2V
- Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
