ADM50N06 N-Channel Enhancement Mode Field Effect Transistor
■The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●Features:
■Low Gate Charge for Fast Switching Application
■Low RDS(ON) to Minimize Conductive Loss
■100% EAS Guaranteed
■Optimized V(BR)DSS Ruggedness
■Lead-Free, RoHS Compliant
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Datasheet |
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Please see the document for details |
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TO220C |
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English Chinese Chinese and English Japanese |
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Feb,2013 |
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Rev.2.01 |
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946 KB |
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