50N06 N-Channel Power MOSFET：TO-252 Plastic-Encapsulate MOSFETS
■The 50N06 uses advanced trench tech no logy and design to provide excellent R-DS（on）with low gate charge. It can be used in a wide variety of applications.
●FEATURE
■High density cell design for ultra low R-dson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
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[ Uninterruptible power supply ][ Hard switched and high frequency circuits ][ Power switching application ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2019/5/4 |
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987 KB |
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