2N7000K TO-92 High Speed Switching Application
■ ESD rating: 1000V (HBM)
■ Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V
■ High power and current handling capability
■ Very fast switching
■ N-Channel Enhancement Mode MOSFET
■ High speed line driver
●MECHANICAL DATA
■Case style:TO-92 molded plastic
■ Mounting position:any
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-92 |
|
|
English Chinese Chinese and English Japanese |
|
|
2017.6 |
|
|
Rev.A |
|
|
|
|
|
603 KB |
- +1 Like
- Add to Favorites
Recommend
- The Characteristics of Silicon Rectifier Diode
- Triode Replacement Principle
- Semiconductor Is The Core of Electronic Products, The Cornerstone of The Information Industry
- What Are The Main Parameters of Lujing diode?
- The 60V/3A N-channel MOSFET 2N7002T Features Low Input Capacitance and Low Input/Output Leakage
- The 60V/1A N-channel MOSFET MOSFET 2N7002KT Features Low On-Resistance and Relatively Low Threshold Voltage
- The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications
- The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
