2N60F TO-220F Plastic-Encapsulate MOSFETS
■RDS(on) =3.8Ω @VGS=10V.
■Low gate charge (typical 9.0 nC).
■Low Crss (typical 5.0 pF).
■Fast switching capability.
■Avalanche energy specified Improved dv/dt capability.
■N-Channel MOSFET
●MECHANICAL DATA
■Case style:TO-220F molded plastic
■Mounting position:any
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2017.6 |
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Rev.A |
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425 KB |
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