2N60 TO-251-3L Plastic-Encapsulate MOSFETS
■Robust High Voltage Termination
■Avalanche Energy Specified
■Source-to-Drain Diode Recovery Time Comparable to a Discrete
■Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits
■IDSS and VDS(on) Specified at Elevated Temperature
■N-Channel Power MOSFET
●MECHANICAL DATA
■Case style:TO-251-3L molded plastic
■Mounting position:any
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Datasheet |
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Please see the document for details |
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TO-251-3L |
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English Chinese Chinese and English Japanese |
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2017.6 |
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Rev.A |
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973 KB |
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