WGU5N60SE/WGD5N60SE 600V N-Channel MOSFET
■Low Intrinsic Capacitances.
■Excellent Switching Characteristics.
■Extended Safe Operating Area.
■Unrivalled Gate Charge :Qg=13.3nC (Typ.).
■VDSS=600V,ID=5A
■RDS(on): 2.5Ω (Max) @VG=10V
■100% Avalanche Tested
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Datasheet |
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Please see the document for details |
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TO‐251;TO‐252 |
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English Chinese Chinese and English Japanese |
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2021/12/6 |
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Rev.1.0LH |
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854 KB |
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