PAP2621NS P-Ch -20V Fast Switching MOSFET VDS=-20V,ID=-4.9A,RDS(ON)=45mΩ

PublishTime：2022-07-14

●General Description
■This PAP2621NS P-Channel enhancement mode power field effect transistor is the high density trench technology and this advanced technology can provide excellent Rds(On) performance and efficiency for power switching and load switching application., this device also comply with the RoHS and Green Product requirement with full function reliability approved.
●Feature
■Green Device Available
■Super Low Gate Charge
■Excellent CdV/dt effect decline
■Advanced high cell density Trench technology
■SOT-23S package design

Brand of Product：	PACELEADER
Part#：	PAP2621NS More Part#
Product Category：	MOSFET More
Application：	[ Load Switch ][ Portable instrument ][ MB / NB / 3C device ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-23S
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2017.Jun
Version Number：	Revision:D
Data Encoding：	33507E16
Data Size：	659 KB

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