PAP2621N P-Ch Fast Switching MOSFET
●This PAP2621N P-Channel enhancement mode power field effect transistor is the high density trench technology and this advanced technology can provide excellent Rds(On) performance and efficiency for power switching and load switching application., this device also comply with the RoHS and Green Product requirement with full function reliability approved
▲Feature
●Super Low Gate Charge
●Green Device Available
●Excellent CdV/dt effect decline
●Advanced high cell density Trench technology
●SOT-23 Package design
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P-Channel enhancement mode power field effect transistor 、 P-Ch Fast Switching MOSFET |
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[ Load Switch ][ Portable instrument ][ MB / NB / 3C device ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2017.Jun |
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Revision:D |
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33507C19 |
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633 KB |
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