FQA19N20C 200V N-Channel MOSFET
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
●Features
■21.8A, 200V, R-DS(on) = 0.17Ω @V-GS = 10 V
■ Low gate charge ( typical 40.5 nC)
■ Low Crss ( typical 85 pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
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FQA Series 、 FQA 、 FQA19N20C |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ high efficiency switched mode power supplies ][ electronic lamp ballasts ] |
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Datasheet |
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Please see the document for details |
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TO-3P |
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English Chinese Chinese and English Japanese |
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2013/12/28 |
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919 KB |
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