FQA18N50V2 500V N-Channel MOSFET
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
●Features
■ 20A, 500V, R-DS(on) = 0.265Ω @V-GS = 10 V
■ Low gate charge ( typical 42 nC)
■ Low Crss ( typical 11 pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
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FQA Series 、 FQA 、 FQA18N50V2 |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ high efficient switched mode power supplies ][ electronic lamp ballast ] |
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Datasheet |
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Please see the document for details |
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TO-3P |
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English Chinese Chinese and English Japanese |
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2013/12/28 |
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663 KB |
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