BS170, MMBF170 Field Effect Transistor - N-Channel, Enhancement Mode DATA SHEET
■These N−Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
●Features
■High Density Cell Design for Low RDS(ON)
■Voltage Controlled Small Signal Switch
■Rugged and Reliable
■High Saturation Current Capability
■These are Pb−Free Devices
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BS170 、 MMBF170 、 BS170−D26Z 、 BS170−D27Z 、 BS170−D74Z 、 BS170−D75Z |
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N-Channel, Enhancement Mode - Field Effect Transistor 、 Field Effect Transistor |
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[ low voltage, low current applications ][ small servo motor control ][ power MOSFET gate drivers ][ switching applications ] |
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Datasheet |
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Please see the document for details |
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TO−92;SOT−23;TO−236 |
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English Chinese Chinese and English Japanese |
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2022/4/30 |
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Rev. 7 |
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MMBF170/D |
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837 KB |
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