MOS Model 20 Level 2002.2
■The model description for the compact high-voltage MOS transistor model called MOS Model 20 (MM20) is presented. MM20 has been developed for circuit simulation of power integrated circuits. MM20 describes the electrical behaviour of a high-voltage MOS device, like a Lateral Double-diffused MOS (LDMOS) device or an extended-drain MOSFET. The model combines the MOSFET operation of the channel region with that of the drift region of such high-voltage devices.
■Since MM20 is a surface-potential–based model, it gives an accurate description in all operation regimes, ranging from sub-threshold to above threshold, in both the linear and saturation regime. MM20 includes strong inversion, depletion, and accumulation, in both the channel region and the drift region of the device. In addition to the previous MM20 model (level=2001), in this MM20 model (level=2002), quasisaturation is included, an effect which is typical for high-voltage LD-MOS devices.
■The objective of this report is to present the full definition of MM20,level=2002, including the model parameter set, the temperature and geometrical scaling rules, and all the implemented model equations for the currents, charges, and noise sources. The parameter extraction strategy is briefly explained.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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May 2009 |
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PR-TN-2005/00406 |
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374 KB |
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