MOS Model 20 Level 2001
■A new transistor model for high-voltage MOS devices has been developed, called MOS Model 20. This transistor model can be used in circuit simulation of high-voltage integrated circuits. MOS Model 20 describes the electrical behaviour of the region under the thin gate oxide of a high-voltage MOS device, like a Lateral Double-diffused MOS(LDMOS) device or an extended-drain MOSFET. It thus combines the MOSFET-operation of the channel region with that of the drift region under the thin gate oxide. As such, MOS Model 20 is aimed as a successor of the combination of MOS Model 9 in series with MOS Model 31 in macro models of various high-voltage MOS devices.
■Since MOS Model 20 is a so-called surface-potential-based model, it gives an accurate description in all operation regimes. MOS Model 20 includes strong inversion, depletion and accumulation, in both the channel region and the drift region. Furthermore, by the calculation of the so-called internal drain voltage inside the model itself, MOS Model 20 aims at a better convergence behaviour during circuit simulation than a macro model consisting of MOS Model 9 in series with MOS Model 31.
■The objective of this report is to present the full definition of MOS Model 20, including the model parameter set, the temperature and geometrical scaling rules, and all the implemented model equations for the currents, charges and noise sources. The physical background of the model is briefly explained, as well as the parameter extraction strategy is given.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2005 |
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PR-TN-2003/00301 |
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358 KB |
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