UJ3C065030B 3650V-27mW SiC FET DATASHEET
■This SiC FET device is based on a unique 'cascode' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true ''drop-in replacement'' to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D²PAK-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
●Features
■Typical on-resistance R-DS(on),typ of 27mW
■Maximum operating temperature of 175°C
■Excellent reverse recovery
■Low gate charge
■Low intrinsic capacitance
■ESD protected: HBM class 2 and CDM class C3
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[ switching inductive loads ][ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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D²PAK-3L |
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English Chinese Chinese and English Japanese |
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April 2022 |
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Rev. B |
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1 MB |
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