UF4SC120023K4S 1200V-23mW SiC FET DATASHEET
■The UF4SC120023K4S is a 1200V, 23mW G4 SiC FET. It is based on a unique 'cascode' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true ''drop-in replacement'' to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
●Features
■On-resistance R-DS(on): 23mW (typ)
■Operating temperature: 175°C (max)
■Excellent reverse recovery: Q-rr = 341nC
■Low body diode V-FSD: 1.2V
■Low gate charge: Q-G = 37.8nC
■Threshold voltage V-G(th): 4.8V (typ) allowing 0 to 15V drive
■Low intrinsic capacitance
■ESD protected: HBM class 2 and CDM class C3
■TO-247-4L package for faster switching, clean gate waveforms
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[ switching inductive loads ][ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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TO-247-4L |
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English Chinese Chinese and English Japanese |
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April 2022 |
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Rev. A |
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1.2 MB |
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