2N60 N-Channel MOSFET
■R-DS(ON)=3.8Ω@VGS=10V.
■Low gate charge ( typical 9.0 nC).
■Low Crss ( typical 5.0 pF).
■Fast switching capability.
■Avalanche energy specified
■Improved dv/dt capability.
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2020/4/21 |
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91 KB |
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