KQB2N60 600V N-Channel MOSFET
■2.4A, 600 V. R-DS(ON)=4.7Ω@V-GS=10V
■Low gate charge (typical 9.0nC)
■Low Crss(typical 5.0pF)
■Fast switching
■100% avalanche tested
■lmproved dv/dt capability
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Datasheet |
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Please see the document for details |
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TO-263 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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99 KB |
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