HSSR-S1A01-2 光MOS固态继电器 产品规格书（HSSR-S1A01-2 Photo MOSFET Solid State Relay SPECIFICATION）
■产品HSSR-S1A01-2 由砷化铝镓红外发光二极管作为输入级耦合到高电压输出光探测电路。光探测电路由高速光电二极管阵列和驱动电路构成，用以开启/关断两个独立的高压金属氧化物半导体场效应管(MOSFET)。一个最小5mA的电流流经输入级红外发光二级管可确保继电器动作。当加在输入级红外发光二级管的正向压降为0.8V或更小值时，继电器可确保复位。
■The HSSR-S1A01-2 consists of a Algaas infrared emitting diode input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The relay action with a minimum input current of 5mA through the input LED. The relay reset with an input voltage of 0.8V or less.
●特点Features:
■微型光MOS固态继电器。Micro Photo MOSFET Solid State Relay.
■单通道常开型单刀单掷继电器。Single Channel Normally on Single-Pole-Single-Throw (SPST) Relay.
■400V输出耐压产品。400V Output Withstand Voltage.
■120mA额定电流产品。120mA Current Rating.
■低输入电流，CMOS兼容。Low Input Current: CMOS Compatibility.
■非常快的开关速度：典型值0.5ms (Ton), 0.2ms (Toff)。High Speed Switching: 0.5ms(Ton), 0.2ms (Toff) Typical
■高输入输出绝缘耐压：3750 Vrms for 1min。High Input-to-Output Insulation Voltage: 3750 Vrms for 1min.
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[ 电信切换 ][ Telecommunication Switching ][ 数据通讯 ][ Data Communications ][ 电池管理 ][ Battery management ][ 工业控制 ][ Industrial Controls ][ 医疗设备 ][ Medical equipment ][ EMR/机械继电器替代 ][ EMR/Reed Relay Replacement ] |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021-03-25 |
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Ver.1.4 |
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754 KB |
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