1SS123 SILICON SWITCHING DIODE
■Low capacitance: C-t = 4.0 pF MAX
■High speed switching: t-rr = 9.0 ns MAX.
■Wide applications including switching,limitter,clipper.
■Double diode configuration assures economical use.
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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39 KB |
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