G1006A Datasheet
■The G1006A uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
■It is ESD protected.
●General Features
■V-DS = 100V, I-D = 6A
▲R-DS(ON) < 210mΩ @ V-GS=10V (Typ:140 mΩ)
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Excellent package for good heat dissipation
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[ Power switching application ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-92 |
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English Chinese Chinese and English Japanese |
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2014/5/5 |
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2 MB |
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