G100N04 Trench Mosfet
■The G100N04 uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●GENERAL FEATURES
■V-DSS: 40V
■R-DS(ON) @4.5V (Typ): 7mΩ
■R-DS(ON) @10V (Typ): 52mΩ
■I-D: 100A
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
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[ PWM ][ Load Switching ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2015/6/12 |
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1.1 MB |
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