Thermal Management of eGaN® FETs
■Enhancement-mode gallium nitride (eGaN®) FETs offer high power-density capabilities with ultra-fast switching and low on-resistance, all in a compact form factor. However, the achievable power levels are limited by thermal overheating due to the extreme heat-flux densities. If not managed properly, the generated heat can result in excessive self-heating and elevated temperatures that compromise reliability and performance. For that reason, thermal management strategies are essential for high-power devices, and with chip-scale packaging of eGaN® FETs, many design advantages can be leveraged at the board-side and the backside (i.e., case) for improved heat dissipation.
■This application note presents simple thermal management guidelines to enhance heat conductance from the GaN FETs and optimize thermal performance. In addition, a case study is presented with simple and effective thermal management solutions for the cooling of a development board with two active GaN® FETs.
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Application note & Design Guide |
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Please see the document for details |
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WLCSP;PCB;LGA;BGA |
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English Chinese Chinese and English Japanese |
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2021/12/22 |
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2 MB |
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