PGA Series of Single-epi 905nm Pulsed Semiconductor Lasers: High Power Laser-Diode Series Datasheet

2022-01-18
●Excelitas Technologies' PGA pulsed laser series consists of hermetically packaged devices having a single-active lasing layer, which are epitaxially grown on a single GaAs substrate chip.The laser chips feature stripe widths of 75 to 600 μm and can be stacked to further increase the output power.
●The PGA series possesses a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane.The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD).
●Recognizing that different applications require different packages, six standard package options are available, including the traditional stud designs as well as 5.6 and 9 mm CD packages and ceramic substrates.
●Since pulse widths in applications have decreased and optical coupling has become even more important, the newer packages –boasting reduced inductance and thinner, flatter windows –have gained popularity.
●Key Features
■Peak power to 160Watts
■Range of single element and stacked devices
■Overdrive capability up to 4 X power
■25°beam divergence for single elements
■83% power retention at 85°C
■RoHS compliant

EXCELITAS

PGAPGA SeriesPGAS1S03HPGAS1S06HPGAS1S09HPGAS1S12HPGAS1S16HPGAS1S24HPGAXXSXXH

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Single-epi 905nm Pulsed Semiconductor LasersHigh Power Laser-Diode

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Laser range finding ]Laser safety curtains ]laser scanning ]Laser speed measurements ]LIDAR ]Automotive adaptive cruise control ]ACC ]medical ]analytical applications ]Weapons simulation ]Proximity Sensing ]

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Datasheet

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2014-04

Rev.2014-04

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