PGA Series of Single-epi 905nm Pulsed Semiconductor Lasers: High Power Laser-Diode Series Datasheet
●The PGA series possesses a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane.The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD).
●Recognizing that different applications require different packages, six standard package options are available, including the traditional stud designs as well as 5.6 and 9 mm CD packages and ceramic substrates.
●Since pulse widths in applications have decreased and optical coupling has become even more important, the newer packages –boasting reduced inductance and thinner, flatter windows –have gained popularity.
●Key Features
■Peak power to 160Watts
■Range of single element and stacked devices
■Overdrive capability up to 4 X power
■25°beam divergence for single elements
■83% power retention at 85°C
■RoHS compliant
PGA 、 PGA Series 、 PGAS1S03H 、 PGAS1S06H 、 PGAS1S09H 、 PGAS1S12H 、 PGAS1S16H 、 PGAS1S24H 、 PGAXXSXXH |
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Single-epi 905nm Pulsed Semiconductor Lasers 、 High Power Laser-Diode |
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[ Laser range finding ][ Laser safety curtains ][ laser scanning ][ Laser speed measurements ][ LIDAR ][ Automotive adaptive cruise control ][ ACC ][ medical ][ analytical applications ][ Weapons simulation ][ Proximity Sensing ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2014-04 |
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Rev.2014-04 |
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830 KB |
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